View NTE5440_1290974.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NTE5440 Silicon Controlled Rectifier (SCR) 800V, 10A, Isolated Tab
Applications: D Temperature Control D Motor Control D Transformerless Power Supply Regulators D Relay and Coil Pulsing D Power Supply Crowbar Protection Absolute Maximum Ratings: Anode to Cathode Non-Repetitive Peak Voltages (t 10ms, Note 1), VDSM, VRSM . . . . . . . . . . . . . . . . . . . . . . 800V Repetitive Peak Voltages ( 0.01), VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Peak Working Voltages, VDWM, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Continuous Voltages, VD, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Average On-State Current, IT(AV) (Averaged over any 20ms period) up to Th = +74C . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7A RMS On-State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Repetitive Peak On-State Current, ITRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A Non-Repetitive Peak On-State Current, ITSM (t = 10ms, Half-Sinewave, TJ = +110C prior to surge, with Reapplied VRWMmax) . 100A 2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A2s I Rate of Rise of On-State Current after Triggering, dIT/dt (IG = 50mA to IT = 20A, dIG/dt = 50mA/s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s Gate to Cathode Reverse Peak Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Average Power Dissipation (Averaged over any 20ms period), PG(AV) . . . . . . . . . . . . . . . 500mW Peak Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Temperatures Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +110C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Maximum Lead Temperature (During Soldering, less than 5sec) . . . . . . . . . . . . . . . . . . . . +275C Note 1. Although not recommended, higher Off-State voltages may be applied without damage, but the thyristor may switch into the On-State. The Rate-of-Rise of On-State current should not exceed 15A/s.
Absolute Maximum Ratings (Cont'd): Isolation: Minimum From all Three Pins to External Heatsink (Peak), Visol . . . . . . . . . . . . . . . . . . . . . 1000V Typical Capacitance from Anode to External Heatsink, Cisol . . . . . . . . . . . . . . . . . . . . . . . . . . . 12pf Thermal Characteristics: Thermal Resistance from Junction to External Heatsink, Rthj-h With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5K/W Thermal Resistance from Junction-to-Ambient in Free Air, RthJA (Mounted on a printed circuit board at a = any lead length and with copper laminate, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Note 2. The quoted values of RthJA should be used only when no leads of other dissipating components run to the same tie-point. Electrical Characteristics: (TJ = +110C unless otherwise specified)
Parameter Anode to Cathode On-State Voltage Rate of Rise of Off-State Voltage that will not Trigger any Device Reverse Current Off-State Current Latching Current Holding Current Gate to Cathode Gate-Trigger Voltage VGT VD = 6V, TJ = 25C VD = 6V, TJ = -40C Voltage that will not Trigger any Device Gate-Trigger Current VGD IGT VD = 800V VD = 6V, TJ = 25C VD = 6V, TJ = -40C Switching Characteristice Gate-Controlled Turn-On Time (tgt = td + tr) when Switched from VD = 800V to IT = 40A tgt IGT = 100mA, dIg/dt = 5A/s, TJ = 25C - 2 - s 1.5 2.3 - 15 20 - - - - - - - 250 - - V V mV mA mA VT dVD/dt IT = 23A, TJ = 25C, Note 3 RGK = Open Circuit RGK = 100 IR ID IL IH VR = 400V VD = 400V TJ = 25C TJ = 25C - - - - - - - - - - - - - - 1.75 50 200 0.5 0.5 40 20 V V/s V/s mA mA mA mA Symbol Test Conditions Min Typ Max Unit
Note 3. Measured under pulse conditions to avoid excessive dissipation.
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
K
A
G
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated

▲Up To Search▲

Price & Availability of NTE5440

	To Download NTE5440 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .